NAND flash memory device and method of making same

ABSTRACT

An integrated circuit includes a NAND string including a string selection transistor SST and a ground selection transistor GST disposed at either end of series-connected memory storage cells MC. Each of the memory storage cells is a memory transistor having a floating gate, and at least one of the string selection transistor SST and the ground selection transistor GST is a memory transistor having a floating gate. The threshold voltage Vth of programmable string selection transistors SST and the ground selection transistor GST is variable and user controllable and need not be established by implantation during manufacture. Each of the programmable string selection transistors SST and the ground selection transistors GST in a memory block may be used to store random data, thus increasing the memory storage capacity of the flash memory device.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of U.S. application Ser. No. 12/424,135filed on Apr. 15, 2009 now U.S. Pat. No. 8,243,518, which claimspriority to Korean Patent Application 10-2008-0046129, filed on May 19,2008, in the Korean Intellectual Property Office, the disclosures ofwhich are incorporated by reference herein in their entireties.

BACKGROUND

1. Technical Field

The present invention generally relates to flash memory devices, andmore particularly, to a method of forming selection transistors asmemory transistors in a NAND type flash EEPROM.

2. Discussion of the Related Art

Non-volatile memory devices, such as flash memory devices, may beprovided in a NOR-type configuration or a NAND-type configuration andcan be electrically rewritten and formed with high integration density.NAND-type nonvolatile semiconductor memory devices include a pluralityof NAND cell units. Each NAND cell unit is configured by seriallyconnecting a plurality of memory transistors in a column directionbetween a source and a drain. Selection gate (SG) transistors areconnected to at each end of the series-connected memory transistorcircuit.

Two types of non-volatile memory transistors are floating gate typememory transistors and floating trap (charge trap) type memorytransistors. A floating gate type memory transistor includes a controlgate and a conductive floating gate that is isolated, by an insulatinglayer, from a field effect transistor (FET) channel formed in asubstrate. Floating gate type memory transistors may be programmed bystoring charges as free carriers on the conductive floating gate.

A floating gate type memory transistor is similar to a standard MOSFETtransistor, except that it has two gates instead of just one. One gateis the control gate (CG) like in other MOSFET transistors, but thesecond gate is a floating gate (FG) that is insulated all around by anoxide insulator. Because the FG is isolated by its insulating oxidelayer, any electrons placed on it get trapped there and thus store theinformation.

When electrons are trapped on the FG, they modify (partially cancel out)an electric field coming from the CG, which modifies the thresholdvoltage (Vt) of the cell. Thus, when the cell is “read” by placing aspecific voltage on the control gate (CG), electrical current willeither flow or not flow between the cell's source and drain connections,depending on the threshold voltage (Vt) of the cell. This presence orabsence of current is sensed and translated into 1's and 0's,reproducing the stored data.

Floating trap (charge trap) type memory transistors may include anon-conductive charge storage layer between a gate electrode and a fieldeffect transistor (FET) channel formed in a substrate. Floating traptype memory transistors may be programmed by storing charges in traps inthe non-conductive charge storage layer.

When a positive voltage is applied on the gate electrode, electrons aretunneled via the tunneling insulating layer to become trapped in thecharge storage layer. As the electrons are accumulated in the chargestorage layer, a threshold voltage of the memory transistor isincreased, and the memory transistor becomes programmed. In contrast,when a negative voltage is applied to the gate electrode, trappedelectrons are discharged to the semiconductor substrate via thetunneling insulating layer. Concurrently, holes become trapped by thetunneling insulating layer. Consequently, the threshold voltage of thememory transistor is decreased, and the memory transistor becomeserased.

Conventional NAND Flash memory strings typically are isolated from otherstrings by shallow trench isolation (STI), that prevents electricalcurrent leakage between adjacent semiconductor device components, andhave three types of transistors which are: the memory transistortransistors (implementing nonvolatile data-storage memory transistors);string select transistors SST; and ground select transistors GST.Typically, in a NAND flash memory device, string selection and groundselection transistors (SSL and GSL) are disposed at the ends of a NANDstring and are used to select the NAND string during program, erase andread operations.

A group of NAND cell units (NAND strings) arranged in a row direction iscalled a NAND cell block (memory block, MB). The gates of selectiontransistors SST and GST arranged on the same row are commonly connectedto a corresponding one of selection gate lines and the control gates ofmemory transistors arranged on the same row are commonly connected to acorresponding one of control gate lines. If n memory transistors areserially connected in the NAND cell unit, the number of control gatelines of memory transistors contained in one NAND cell block is n.

When programming data, first, all data items stored in all memorytransistors of memory storage cells in the entire memory block (MB) aresimultaneously erased. The erase process is performed by setting all ofthe control gate lines (word lines) of memory transistors in theselected memory block to a low voltage Vss (for example, 0V) andapplying high positive voltage Vera (erase voltage, for example, 20V) toa p-type well region in which the memory cell array is formed todischarge electrons in the floating gates into the channel regions. As aresult, all data items stored in all memory transistors of memorystorage cells in the entire memory block are all set to “1” data.Multiple or all memory blocks can be simultaneously erased.

After the above-described simultaneous data erase step, the dataprogramming process is simultaneously performed for a plurality ofmemory transistors connected to a selected control gate line. The unitof binary data to be programmed in the memory transistors connected to aselected control gate line is generally defined as one “page” of data.The “page” order in which data is programmed into the memory transistors(pages) in the memory block is based either on a system in which data isprogrammed in a random order (random programming process) or on a systemin which data is sequentially programmed in one direction (sequentialprogramming process). In the sequential programming process, generally,data is programmed in sequential pages in order from the source-sidememory transistor.

If high positive voltage Vpgm (program voltage, for example, 20V) isapplied to a selected control gate line in the simultaneous programmingprocess, electrons are injected from the channel of the memorytransistor into the floating gate in the case of “0” data (so-called “0”programming or “0” write). In this case, injection of electrons isinhibited in the case of “1” data (so-called program inhibition, “1”programming or “1” write). Thus, while writing random data into memorytransistors of one page, two types of data programming operations aresimultaneously performed and it is necessary to control the channelvoltage of each memory transistor according to its program data. Forexample, in the case of “0” data, the channel voltage is kept low so asto apply a strong electric field to the gate insulating film under thefloating gate when the program voltage Vpgm is applied to the controlgate. In the case of “1” data, the channel voltage is boosted so as tomake weak the electric field applied to the gate insulating film andinhibit injection of electrons into the floating gate. If the channelvoltage is insufficiently boosted, electrons are injected so that thethreshold voltage of the memory transistor to be subjected to the “1”programming process will be changed. This phenomenon is referred as“erroneous programming” or “write error” or “program disturb”.Therefore, in order to realize the programming operation of the NANDtype flash EEPROM, it is necessary to suppress variation in thethreshold voltage due to erroneous programming within a specified rangeso as not to cause erroneous operation.

In a conventional NAND Flash memory string, the select transistors SSTand GST are standard. MOSFET transistors, each having one control gate.

A leakage current may occur in unselected strings in unselected blocksduring a read operation of a selected block, thereby causing read errorto occur. Hence, it is necessary to control the leakage current of theselect transistor. To this end, conventionally a threshold voltageimplant is performed during manufacture in the select transistor region,requiring additional (e.g., mask, implantation) steps in a method ofmanufacturing the NAND flash memory device.

For the purpose of controlling threshold-voltage distributions ofprogrammed memory cells densely and precisely, an incremental step pulseprogramming (ISPP) mode is often used. According to the ISPP mode, aprogramming voltage applied to a word line rises stepwise up duringrepetition of loops of programming cycle. The programming voltageincreases by a predetermined step increment (ΔV), also referred to as a“rising rate”. During the programming sequence, a cell threshold voltageof a programmed cell increases at a rate predetermined for eachprogramming loop. Programming of a nonvolatile memory device by means ofthe ISPP mode is disclosed in U.S. Pat. No. 6,266,270, entitled“Non-Volatile Semiconductor Memory and Programming Method of the Same”.Each programming loop generally is divided into programming andprogram-verifying periods. In the programming period, memory cells areprogrammed under a given bias condition as is well known in this art. Inthe program-verifying period, the memory cells programmed once areverified whether they are conditioned in the target threshold voltages.The programming loops are repeated for a predetermined number of timesuntil all memory cells are completely programmed at the target thresholdvoltages. As well known, the program-verifying operation is similar to areading operation, except that read data is not output to external ofthe device.

SUMMARY OF THE INVENTION

An aspect of the invention provides NAND cell units including selectiontransistors (e.g., string select transistors SST and/or ground selecttransistors GST) that are programmable memory transistors. The selectiontransistors SST and GST may be formed as memory transistors each havinga floating gate in addition to a control gate. Thus, the thresholdvoltage Vth of the selection transistors SST and GST can be controlledby the user who may control the extent that the selection transistorsSST and GST are programmed. If memory storage cells disposed between theselection transistors SST and GST in the same NAND cell unit are formedas memory transistors each having a floating gate in addition to acontrol gate, then conventionally necessary fabrication steps forcreating a butting contact between the control gate and a dummy floatinggate formed in the selection transistors SST and GST can be avoided.Further, because the string selection transistor SST and the groundselection transistor GST in each NAND cell unit in every memory blockbecome a read/write accessible memory transistor, additional data can bestored in selection transistors SST and GST in each memory block, thusincreasing the capacity of Flash memory devices. And because the gatelengths of the control gates of selection transistors may be the same asthe gate length of the control gates of the memory storage cells MC(MC0, MC1, MCi-2, MCi-1), the integration and scalability of NAND flashdevices may be improved.

An aspect of the invention provides a flash memory device, comprising: aplurality of memory blocks, each memory block including a NAND cell unithaving a first selection transistor connected in series to a pluralityof memory cells controlled by respective wordlines, wherein each memorycell is a memory transistor, wherein the first selection transistor is amemory transistor. Each NAND cell unit may further comprise a secondselection transistor (e.g., GST) connected in series to a plurality ofmemory cells, and the second selection transistor (e.g., GST) may alsobe a memory transistor. Every memory cell transistor may include acontrol gate and a floating gate. The first selection transistor may bea string selection transistor SST controlled by a string selection lineSSL, and the second selection transistor may be a ground selectiontransistor GST controlled by a ground selection line. The firstselection transistor being a memory transistor has a variablyprogrammable threshold voltage, and thus its threshold voltage need notbe fixed by implantation at time of manufacture.

Another aspect of the invention provides a method of programming a flashmemory device having an plurality of NAND cell units in each of aplurality of memory blocks, a plurality of memory cell transistors ineach NAND cell unit controlled by respective wordlines, a firstselection line connected to a first selection transistor in each of theNAND cell units in a memory block, each first selection transistor beinga memory transistor connected in series to the plurality of memory celltransistors in each NAND cell unit. The method comprises: simultaneously(bulk) erasing all of the memory cell transistors in the first memoryblock among the plurality of memory blocks (or in all memory blocks);then programming all the memory cell transistors connected to a firstwordline in the first memory block; then programming andprogram-inhibiting all first selection transistors (e.g., stringselection transistors SST) in every NAND cell unit of the first memoryblock. The method preferrably further comprises verifying the thresholdvoltage of each first selection transistor (e.g., string selectiontransistors SST) to have a predetermined threshold voltage. The memorycell transistors of the flash memory device may be memory transistors ofthe floating gate type and the first selection transistors (e.g., stringselection transistors SST) and also the second selection transistors(e.g., ground selection transistors GST) may be memory transistors ofthe floating gate type.

Another aspect of the invention provides a solid state memory module fora computer system, the module comprising: a housing; an interfaceconnector on the housing; a flash memory controller located within thehousing, and an integrated circuit including the NAND cell unitsincluding string selection transistors SST and/or ground selectiontransistors GST that are memory transistors (e.g., of the floating gatetype). The interface connector may be an IDE interface connectorincluding a forty IDE pin interface and a power connector, or thehousing may have an SD card form factor and the interface connector haseight electrical contact pads. Alternatively, the housing may have theform factor of any of a MS (memory stick), CF (compact flash), SMC(smart media), MMC (multi media), SD (Secure Digital), or XD (XD-PictureCard).

Another aspect of the invention provides a computer system comprisingthe solid state memory module. The computer system may be a personalcomputer (PC), a personal digital assistant (PDA), an MP3 player, adigital audio recorder, a pen-shaped computer, a digital camera, or avideo recorder.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features of exemplary embodiments of the presentinvention will become readily apparent to persons skilled in the art byreference to the following detailed description when considered inconjunction with the accompanying drawings wherein:

FIG. 1 is a block diagram of a flash memory device 100 according to anembodiment of the present invention, connected to a host (external)device 200;

FIG. 2 is a block diagram of a memory block (MB) within the memory cellarray (110) in the flash memory device 100 of FIG. 1;

FIG. 3 is a side cross-sectional view of a NAND cell unit in anintegrated circuit according to an exemplary embodiment of the presentinvention, along section line 112-113 in the memory block (MB) withinthe memory cell array 110 in the flash memory device 100 of FIG. 1;

FIG. 4 is a flow chart illustrating a method of incremental step pulseprogramming (ISPP) of string select transistors SSL and/or ground selecttransistors GSL in the NAND cell unit of FIG. 3;

FIG. 5 is a circuit diagram of the NAND cell unit of FIG. 3, with groundvoltage applied during the “erase all memory blocks” step S100 of FIG.4.

FIG. 6 is a circuit diagram of the NAND cell unit of FIG. 3, with apulsed voltage Vpgm applied during a “one-pulse programming” of memorycells step S110 of FIG. 4.

FIG. 7 is a flow chart illustrating a method of performing step S120 ofFIG. 4 by incremental step pulse programming (ISPP) of string and/orground select transistors (SST and/or GST), block by block, in the flashmemory device 100 of FIG. 1;

FIG. 8 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied in a current memory block (BN) during the“SST programming” step S220 of FIG. 7;

FIG. 9 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied in a current memory block (BN) during the“verify SST Vth” step S230 of FIG. 7;

FIG. 10 is a graph of the distribution of verified threshold voltagesVth in the programmable string select transistors SST in the NAND flashmemory of FIG. 3, and their data contents when recording 1-bit (binary)data;

FIG. 11 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied during a “SST PGM-inhibit” mode ofoperation;

FIG. 12 is a graph illustrating the relationship between Pulse Durationand threshold voltage Vth of the programmable string select transistorsSST;

FIG. 13 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied during another “SST PGM-inhibit” mode ofoperation;

FIG. 14 is a flow chart illustrating a method of incremental step pulseprogramming (ISPP) of ground select transistors GST in the NAND cellunit of FIG. 3, block by block, in the memory blocks (MB) within thememory cell array 110 in the flash memory device 100 of FIG. 1;

FIG. 15 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied during the “GST programming” step S320 ofFIG. 14 to write a data “0”;

FIG. 16 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied during the “verify GST Vth” step 330 ofFIG. 14;

FIG. 17 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied during a “GST PGM-inhibit” mode ofoperation to write a data “1”;

FIG. 18 is a flow chart illustrating a method of incremental step pulseprogramming (ISPP) of ground select transistors GSL in the NAND cellunit of FIG. 3, block by block, in the memory blocks (MB) within thememory cell array 110 in the flash memory device 100 of FIG. 1;

FIG. 19 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied for “one pulse” programming of groundselect transistors GST during step S410 of FIG. 18;

FIG. 20 is circuit diagram of a memory block comprising a NAND cell unit111′ having a programmable string select transistor SST and anon-programmable ground select transistor SST according to an exemplaryembodiment of the present invention;

FIG. 21 is a side cross-sectional view of a NAND cell unit 111′ in anintegrated circuit according to the embodiment of the present inventionof FIG. 20, along section line 114-115;

FIG. 22 is circuit diagram of a memory block comprising a NAND cell unit111″ having a programmable ground select transistor GST according toanother embodiment of the present invention;

FIG. 23 is a side cross-sectional view of a NAND cell unit 111″ in anintegrated circuit according to the another embodiment of the presentinvention, along section line 116-117 in FIG. 22; and

FIG. 24 is a block diagram of a computer system including a removablememory card 1210 including a flash memory device 100 of FIG. 1.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

FIG. 1 is a block diagram of a flash memory device 100 (e.g., a flashmemory card or solid state disk) according to an embodiment of thepresent invention, connected to host (external) device 200. Theremovable memory card 100 will typically have a housing that has apredetermined form factor and interface, such as SD (Secure Digital), MS(memory stick), CF (compact flash), SMC (smart media), MMC (multimedia), or XD (XD-Picture Card), PCMCIA, CardBus, IDE, EIDE, SATA, SCSI,universal serial bus e.g., a USB flash drive, etc.

The memory card 100 further includes a memory controller (not shown)which controls data flow and commands between a memory Input/Outputinterface 160 and the flash memory transistors (in memory cell array110). Some examples of the external device 200 include personalcomputers, file servers, peripheral devices, wireless devices, digitalcameras, personal digital assistants (PDA's), MP3 audio players, MPEGvideo players, and audio recorders. It will be appreciated by thoseskilled in the art that additional circuitry and control signals can beprovided, and that the computer system of FIG. 1 has been simplified.

The flash memory device 100 includes a memory cell array 110, a row (X)selector 120, a register block 130, an Input/Output interface 160, avoltage generator 150, and control logic 140. The register block (datainput/output buffer) 130 latches program data, senses and latches dataat the readout time. The Voltage Generator (booster circuit) 150 createsand generates the program voltage Vpgm, a plurality of differentintermediate voltages (e.g., Vpass1 to Vpassn) and a bit line voltageVb1 from the power supply voltage. The row (X) selector 120 supplies acontrol signal to the Voltage Generator 150 and is supplied with theprogram voltage Vpgm and the intermediate voltages Vpass1 to Vpassn.

FIG. 2 is a block diagram of an extracted main portion of the flashmemory device 100 of FIG. 1 illustrating a memory block (MB) within thememory cell array 110. In FIG. 1 and FIG. 2, only the circuits requiredfor explaining the embodiment are shown. It should be noted that anaddress buffer and timing generator circuit and the like used to operatethe memory device are known to one skilled in the art and are not shown.

Referring to FIG. 1 and FIG. 2, in a memory cell array 110, NAND cellunits 111 are arranged in row and column directions in a matrix form,and connected to control gate lines (e.g., word lines WL₀-WL_(i-1)), bitlines (BL0, BL1, BL2 . . . BL_(j-1)), string and ground selection lines(SSL, GSL), and source lines (CSL). The row selection circuit (X-SEL)decodes a row address signal and outputs various voltages that are usedto selectively activate the memory storage cells (MC0, MC1, MCi-2,MCi-1), in the NAND cell units 111 in the memory cell array 110 based onthe voltage supplied from a booster circuit (not shown). Thus, selectedones of the control gate lines (WL₀-WL_(i-1)) and selection gate lines(SSL, GSL), in the memory cell array 110 are selected. Further, the bitlines (BL0, BL1, BL2 . . . BL_(j-1)) receive the bit line voltage Vb1from the voltage generator (booster circuit) 150 and supply the voltageto the column of the selected NAND cell unit selected by the columndecoder (not shown).

In the case of programming, voltages such as the program voltage Vpgm,intermediate voltages Vpass1 to Vpassn and bit line voltage Vb1 aregenerated from the power supply voltage by the voltage generator 150.The above voltages are applied to the control gate lines (WL₀-WL_(i-1))and selection gate lines (SSL, GSL), and source line of the selectedmemory block (MB) via the row selector 120 and data is programmed into aselected memory transistor. The program voltage Vpgm is applied to theselected control gate line and the types of voltages applied to thenon-selected control gate lines and the way of applying the voltages tothe non-selected control gate lines vary depending upon the position ofthe selected control gate line in the selected memory block (MB). Thememory storage cells (MC0, MC1, MCi-2, MCi-1) may be memory transistorsof the floating gate type, and in that case the selection transistorsSST and GST may also be memory transistors of the floating gate type andso there is no butting contact between the control gate and the floatinggate in the selection transistors SST and GST.

FIG. 3 is a side cross-sectional view, of a NAND cell unit 111 formed inan integrated circuit according to a first embodiment of the presentinvention, along section line 112-113 in the memory block (MB) withinthe memory cell array 110 in the flash memory device 100 of FIG. 1. TheNAND cell unit 111 is formed on a semiconductor substrate 100-1. Thechannel of the NAND cell unit 111 is formed in the semiconductorsubstrate 100-1 between the selection transistors SST and GST. Thechannel of the NAND cell unit 111 may be isolated from channels of otheradjacent NAND cell units by shallow trench isolation (STI) (not shown),that prevents electrical current leakage between adjacent semiconductordevice components. In this exemplary embodiment, both the stringselection transistor SST and the ground select transistor GST are memorytransistors. Thus, the string selection transistor SST has a controlgate (SSL) and a floating gate (SST-FG). And, the ground selectiontransistor GST has a control gate (GSL) and a floating gate (GST-FG).

The memory storage cells MC (MC0, MC1, MCi-2, MCi-1) may be memorytransistors of the floating gate type each having a floating gate MC-FG,and in that case the selection transistors SST and GST may be memorytransistors of the floating gate type and there is no butting contactbetween the control gates (SSL, GSL) and the floating gates (SST-FG,GST-FG) in the selection transistors SST and GST.

In conventional NAND cell units, the gate length of the control gates ofselection transistors are longer than the gate length of control gatesof memory storage cells MC (MC0, MC1, MCi-2, MCi-1) connected to wordlines WL, because selection transistors are normally reliant upon dopingduring manufacture to achieve an appropriate threshold voltage Vth. Inaccordance with an exemplary embodiment of the invention, the selectiontransistors are programmable memory transistors, and the gate lengths ofthe control gates of selection transistors may be the same as the gatelength of the control gates of the memory storage cells MC (MC0, MC1,MCi-2, MCi-1).

FIG. 4 is a flow chart illustrating a method of incremental step pulseprogramming (ISPP) of string select transistors SSL and/or ground selecttransistors GSL in the NAND cell unit of FIG. 3, block by block, in thememory blocks (MB) within the memory cell array 110 in the flash memorydevice 100 of FIG. 1.

Each memory storage cell (memory transistors MC0, MC1, MCi-2, MCi-1) isable to store binary data, (i.e., “program” data “0” involving a highthreshold voltage representing that electrons have been injected intothe floating gate from a channel thereof, and “erase” or “inhibit” data“1” involving a low threshold voltage representing that electrons havebeen discharged from the floating gate to the channel). Before datawriting, data stored in all the memory storage cells (memory transistorsMC0, MC1, MCi-2, MCi-1) of the memory block are beforehand erasedcollectively.

In general, a preferred sequence of operations is to erase all thememory storage cells (memory transistors MC0, MC1, MCi-2, MCi-1) and allthe string select transistors (SST) and/or ground select transistors(GST) in all (or a plurality of) memory blocks (MB) S100 (see erase biasvoltages applied in FIG. 5); and next to program the memory storagecells in the memory cell array, block by block S110 (see voltagesapplied in FIG. 6), and finally to program string select transistors(SST) and/or ground select transistors (GST), block by block, in each ofthe programmed memory blocks S120 (e.g., according to received data andby the method illustrated in FIG. 7).

FIG. 5 is a circuit diagram of the NAND cell unit of FIG. 3, with groundvoltage applied during an “all block erasing” mode of operation. In stepS100 of FIG. 4, all the memory cell transistors in a memory block areerased collectively. This is performed by applying a low voltage Vss(e.g., ground, 0 volts) to all the control gate lines (word linesWL₀-WL_(i-1)) of a selected memory block, while applying a positiveboosted voltage (erasing voltage Vers) to a p-type well (PWELL) of theNAND string to cause electrons in the respective floating gates of thememory storage cells (memory transistors MC0, MC1, MCi-2, MCi-1) todischarge into their NAND string channels. Meanwhile, the source line(CSL) and the bit lines (BL0, BL1, BL2 . . . BL_(j-1)) are floating.Thus, data in all the memory storage cell (memory transistors MC0, MC1,MCi-2, MCi-1) of the NAND memory block are set to “1” (erased state).These bias conditions may be applied simultaneously to multiple or allmemory blocks MB in the memory cell array 110 of the memory device 100,resulting in the bulk erase of multiple or all memory blocks.

During this erase step S100, the low voltage Vss (e.g., ground, 0 volts)is also applied to the string selection lines (SSL), and the groundselection lines (GSL) while the positive boosted voltage (erasingvoltage Vers) is applied to the p-type well (PWELL). Thus, the stringselection transistor (SST) and the ground selection transistor (GST)that are memory transistors including floating gates, are also erased(set to “1”).

FIG. 6 is a circuit diagram of the NAND cell unit of FIG. 3, with apulsed voltage Vpgm applied during a “one-pulse programming” of memorystorage cells in step S110 of FIG. 4.

After step S100 in FIG. 4 of erasing all the data collectively in therespective NAND strings of one or more memory blocks, data writing stepS110 may be performed by sequentially writing, with one-pulse per page,into the memory storage cells in the pages of each memory block,starting with the memory storage cells arranged in the page along thecontrol gate line (word line WL0) nearest the source line (CSL). In thecase of writing a “0” data into a memory storage cell, when a positiveboosted (programming) voltage Vpgm is applied to a selected word line(e.g., WL0), electrons are then injected into a floating gate of theselected memory transistor (e.g., MC0) from the channel of therespective NAND string (so-called “0 write”). In the case of “1” datawriting, electron injection is inhibited (so-called “write inhibit” or“1” write).

Data writing into the respective memory storage cells of each NANDstring may be performed by controlling the channel potential of aselected memory storage cell depending upon whether data “0” or “1” isto be written therein. For example, in the case of data “0” writing, thechannel potential is kept low. Thus, when the write voltage is appliedto the control gate of the selected memory storage cell (e.g. MC0), itsfloating gate is boosted to thereby cause electron injection into thefloating gate. In the case of “1” data writing (or write inhibit), thechannel potential is boosted to thereby inhibit electron injection intothe floating gate.

There are various systems for controlling channel potentials in the caseof data writing. A self-boost system is used in which when “1” data isto be written, the channel of a selected memory storage cell is placedin a floating state and the channel potential is boosted by capacitivecoupling of the channel to the control gate. More particularly, beforethe write voltage is applied to the control gate line of a particularmemory storage cell (e.g., WL0), Vss or Vdd is applied to its bit linedepending upon write data “0” or “1” to turn ON a selected gatetransistor (e.g., MC0) on the bit line side and to turn OFF a selectedgate transistor on the source side. Thus, when “0” data is to bewritten, Vss is transferred to the NAND cell channel. When “1” data isto be written, the NAND cell channel is precharged to a potential equalto the voltage (for example, Vdd+.alpha.) applied to the gate of theselected gate transistor minus the threshold voltage of the selectedgate transistor to thereby place the NAND cell channel in a floatingstate.

A Local Self-Boost (LSB) system is also used in which two memory storagecells disposed one on either side of a selected memory storage cell areturned OFF. Thus, only the channel of the selected memory storage cellis placed in a floating state where it is cut off from other memorystorage cells to thereby boost the channel of the selected memorystorage cell.

FIG. 7 is a flow chart illustrating a method of performing step S120 ofFIG. 4. The string select transistors (SST) and/or ground selecttransistors (GST) are incremental step pulse programmed (ISPP), block byblock among the memory blocks (MB) within the memory cell array 110 inthe flash memory device 100 of FIG. 1.

In initialization step S200, the memory block number (counter) BN isinitialized to zero. The memory block number (counter) BN is incremented(S250) each time the steps S210, S220, S230 are performed upon thecurrent memory block, until all memory blocks (S240, YES branch) havebeen processed. In step S210, data not for storage in the memory storagecells (memory transistors MC0, MC1, MCi-2, MCi-1) of the flash memorydevice 100 of FIG. 1 is received by the flash memory device 100 ofFIG. 1. Next, in programming step S220, the string select transistorsSST in a current memory block (memory block number BN) are programmed(with “0” or, “1” data) by applying the received data and the biasvoltages as illustrated in FIG. 8 or 11 (or FIG. 13). Next, inverification step S230, the just-programmed string select transistorsSST are read, and it is determined whether the programmed string selecttransistors SST in the current memory block (memory block number BN)have a proper threshold voltage Vth. If not (NO branch of S230), thenthe string select transistors SST in a current memory block (memoryblock number BN) are re-programmed according to the same received data.If the string select transistors SST in a current memory block (memoryblock number BN) are verified (see FIGS. 9, 10) as having the properthreshold voltage (YES branch of S230), then the memory block number(counter) BN is incremented (S250) and the steps S210, S220, S230 areperformed upon the string select transistors SST in the next memoryblock.

FIG. 8 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied in a current memory block (BN) during an“SST programming” step S220 of FIG. 7. The string select transistors SSTin each block can store binary data, (e.g., “program” data “0” involvinga high threshold voltage representing that electrons have been injectedinto the floating gate from a channel thereof, and “erase” or “inhibit”data “1” involving a low threshold voltage representing that electronshave been discharged from the floating gate to the channel) and areprogrammed by applying the received data and the bias voltages asillustrated in FIGS. 8, 11, 12.

During the “SST programming” step S220 of FIG. 7, a ground voltage (0V)is applied to all the control gate lines (e.g., word linesWL₀-WL_(i-1)), and to the control gate/line (GSL) of the ground selecttransistor (GST), and the ground voltage (0V) is applied to the bit lineBL and to the source line CSL. The program voltage Vpgm is applied tothe string select line SSL and to the control gates of all string selecttransistors SST in the memory block. Thus all string select transistorsSST in the current memory block may be programmed to have a desiredthreshold voltage Vth, e.g., with “0” data stored therein.

FIG. 9 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied in a current memory block (BN) during the“verify SST Vth” step S230 of FIG. 7.

During the “verify SST Vth” step S230 of FIG. 7, a verify-voltageV_(VFY) is applied to the string select line SSL and to the controlgates of all string select transistors SST in the current memory blockBN. Meanwhile, the ground voltage (0V) is applied to the source line CSLat the other end of the NAND string, and a ground voltage (0V) orread-enabling voltage Vread is applied to the control gates of all thememory storage cells (memory transistors MC0, MC1, MCi-2, MCi-1) and tothe control gate/line (GSL) of the ground select transistor (GST). Ifthe actual programmed threshold voltage Vth of the string selecttransistors SST in the current memory block BN is less than the appliedverify-voltage V_(VFY) then the voltage output on the bitline BL may beset to ground (0V), and the verification may fail (“NO” branch of stepS230 of FIG. 7). If the actual programmed threshold voltage Vth of thestring select transistors SST in the current memory block BN is greaterthan applied verify-voltage V_(VFY) then the voltage produced on thebitline BL may remain at the high voltage Vcc, and the verification maypass (“YES” branch of step S230 of FIG. 7).

FIG. 12 is a graph illustrating the relationship between Pulse Durationand threshold voltage Vth of the programmable string select transistorsSST. As illustrated in FIG. 12, the programmed threshold voltage Vth ofthe programmable string select transistors SST can be incrementallyincreased (see vertical curved arrows) by repeating a pulsed programmingvoltage Vpgm as indicated by the repeatable programming step S220 inFIG. 7. Thus, if in step S230 of FIG. 7 actual programmed thresholdvoltage Vth of the string select transistors SST in the current memoryblock BN is less than the applied verify-voltage V_(VFY) and theverification fails (“NO” branch of step S230 of FIG. 7), the pulse ofthe programming step S220 of FIG. 7 may be repeated until the actualthreshold voltage is incrementally increased to a value high enough thatthe programmable string select transistors SST passes (“NO” branch ofstep S230 of FIG. 7) the verification step S230 of FIG. 7.

FIG. 10 is a graph of the distribution of verified programmed thresholdvoltages Vth of the programmable string select transistor SST in theNAND flash memory of FIG. 3, and their data contents when recording1-bit (binary) data having two values (“erase/inhibit” and “program”).In FIG. 10, the abscissa indicates the actual threshold voltages Vth andthe ordinate indicates the distribution frequency of memory transistorsat the threshold voltage Vth. As indicated in FIG. 10, following averification step (FIG. 9 and step S230 of FIG. 7), all programmedthreshold voltages Vth of programmable string select transistor SST aregreater than the verify-voltage V_(VFY) (FIG. 9 and step and “YES”branch of step S230 of FIG. 7). If all programmable string selecttransistor SST in a memory block are programmed, then all suchprogrammable string select transistor SST have a desired thresholdvoltage Vth.

FIG. 11 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied during a “SST PGM-inhibit” mode ofoperation. As previously noted, random data can be stored in theprogrammable string select transistor SSTs. Thus, a user may desire tostore (leave) “1” (erase/inhibit) data in programmable string selecttransistor SSTs. The erase” or “inhibit” data “1” is indicated by a lowthreshold voltage Vth representing that electrons have been dischargedfrom the floating gate to the channel).

During the “SST PGM inhibit” mode of operation, a ground voltage (0V) isapplied to all the control gate lines (e.g., word lines WL₀-WL_(i-1)),and to the control gate/line (GSL) of the ground select transistor(GST), and the ground voltage (0V) is applied to the source line CSL.However, a voltage V1 indicating data “1” is applied to the bit line BL,and V1 is greater than the ground voltage (0V). The voltage of V1 may beapplied without changing of register. Meanwhile, the program voltageVpgm is applied to the string select line SSL and to the control gatesof all string select transistors SST in the memory block. Thus all thestring select transistors SST in the current memory block may besimultaneously and randomly programmed or inhibited to have a desiredthreshold voltage Vth, e.g., a high Vth in SSTs with “0” data storedtherein (see FIG. 8), or a low Vth in SSTs with “1” data stored therein(FIG. 11).

Referring again to FIG. 12, at the bias conditions of FIG. 11 and FIG.8, the threshold voltage Vth of an unselected (inhibit) string selecttransistor SST is slightly increased, and the threshold voltage Vth ofselected (programmed) string select transistor SST is steeply increased.If the register is changed, the voltage of V1 may high enough (2V˜3V) toprevent Fowler-Nordheim (FN) tunneling through tunnel barrier of thestring select transistor SST. The tunnel barrier layer may compriseSiO2, SiON, SiN, Al2O3, HfO2, HfSiON, and ZrO2.

FIG. 13 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied during another “SST PGM-inhibit” mode ofoperation. The voltages applied in this case are the same as applied inFIG. 11 except that the bit line BL is floating instead of being held toa fixed voltage V1. If the capacitance of the bit line is small enough,the bit line BL may be capacitatively coupled to the voltage of Vpgm.

FIG. 14 is a flow chart illustrating a method of incremental step pulseprogramming (ISPP) of ground select transistors GSL in the NAND cellunit of FIG. 3, block by block, in the memory blocks (MB) within thememory cell array 110 in the flash memory device 100 of FIG. 1. Themethod of incremental step pulse programming (ISPP) of programmableground select transistors GST of FIG. 14 is similar or the same asmethod of incremental step pulse programming (ISPP) of programmablestring select transistors SST of FIG. 7.

The ground select transistors GST are incremental step pulse programmed(ISPP), block by block among the memory blocks (MB) within the memorycell array 110 in the flash memory device 100 of FIG. 1.

The ground select transistors GST in each block are able to store binarydata, (i.e., “program” data “0” involving a high threshold voltagerepresenting that electrons have been injected into the floating gatefrom a channel thereof, and “erase” or “inhibit” data “1” involving alow threshold voltage representing that electrons have been dischargedfrom the floating gate to the channel) and are programmed by applyingthe received data and the bias voltages as illustrated in FIGS. 15 and17.

In initialization step S300, the memory block number (counter) BN isinitialized to zero. The memory block number (counter) BN is incremented(S350) each time the steps S310, S320, S330 are performed upon thecurrent memory block, until all memory blocks (S340, YES branch) havebeen processed. In step S310, data not for storage in the memory storagecells (memory transistors MC0, MC1, MCi-2, MCi-1) of the flash memorydevice 100 of FIG. 1 is received by the flash memory device 100 ofFIG. 1. Next, in programming step S320, the ground select transistorsGST in a current memory block (memory block number BN) are programmed(with “0” or “1” data) by applying the received data and the biasvoltages as illustrated in FIG. 15 or 17. Next, in verification stepS330, the just-programmed ground select transistors GST are read, and itis determined whether the programmed ground select transistors GST inthe current memory block (memory block number BN) have a properthreshold voltage Vth. If not (NO branch of S330), then the groundselect transistors GST in a current memory block (memory block numberBN) are re-programmed according to the same received data. If the groundselect transistors GST in a current memory block (memory block numberBN) are verified (see FIG. 16) as having the proper threshold voltage(YES branch of S330), then the memory block number (counter) BN isincremented (S350) and the steps S310, S320, S330 are performed upon theground select transistors GST in the next memory block.

FIG. 15 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied during the “GST programming” step S320 ofFIG. 14 to write a data “0”. During the “GST programming” step S320 ofFIG. 14, a read-enabling voltage (Vread or Vpass) is applied to all thecontrol gate lines (e.g., word lines WL0-WLi-1), and the ground voltage(0V) is applied to the bit line BL. The program voltage Vpgm is appliedto the ground select line GSL and to the control gates of all groundselect transistors GST in the memory block. Thus all ground selecttransistors GST in the current memory block may be programmed to have adesired threshold voltage Vth, e.g., with “0” data stored therein.

FIG. 16 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied during a “verify GST Vth” step 330 of FIG.14.

During the “verify SST Vth” step S330 of FIG. 14, a verify-voltageV_(VFY) is applied to the ground select line GSL and to the controlgates of all ground select transistors GST in the current memory blockBN. Meanwhile, the ground voltage (0V) is applied to the source lineCSL, and a read-enabling voltage Vread (e.g., ground voltage, 0V) or isapplied to the control gates of all the memory storage cells (memorytransistors MC0, MC1, MCi-2, MCi-1) and to the control gate/line (SSL)of the string select transistor (SST). If the actual programmedthreshold voltage Vth of the ground select transistor GST in the currentmemory block BN is less than the applied verify-voltage V_(VFY) then thevoltage output on the bitline BL to the register may be set to ground(0V), and the verification may fail (“NO” branch of step S330 of FIG.14). If the actual programmed threshold voltage Vth of the ground selecttransistor GST in the current memory block BN is greater than appliedverify-voltage V_(VFY) then the voltage produced on the bitline BL mayremain at the high voltage Vcc, and the verification may pass (“YES”branch of step S330 of FIG. 14).

FIG. 17 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied during a “GST PGM-inhibit” mode ofoperation. As previously noted, random data can be stored in theprogrammable string select transistor GST. Thus, a user may desire tostore (leave) “1” (erase/inhibit) data in programmable ground selecttransistor GSTs. During the “GST PGM-inhibit” mode of operation, aread-enabling voltage Vread (e.g., ground voltage (0V)) is applied toall the control gate lines (e.g., word lines WL₀-WL_(i-1)), and to thecontrol gate/line (SSL) of the string select transistor SST, and thesource line CSL may float. However, a voltage V1 indicating data “1” isapplied to the bit line BL, and V1 is greater than the ground voltage(0V). The voltage of V1 may be applied without changing of register.Meanwhile, the program voltage Vpgm is applied to the ground select lineGSL and to the control gates of all ground select transistors GST in thecurrent memory block BN. Thus all the ground select transistors GST inthe current memory block may be simultaneously and randomly programmed(“0” write) or inhibited (“1” write) to have a desired threshold voltageVth, e.g., a high Vth in GSTs with “0” data stored therein (see FIG. 8),or a low Vth in GSTs with “1” data stored therein (see FIG. 12).

FIG. 18 is a flow chart illustrating a method of incremental step pulseprogramming (ISPP) of ground select transistors GSL in the NAND cellunit of FIG. 3 or FIG. 23, block by block, in the memory blocks (MB)within the memory cell array 110 in the flash memory device 100 ofFIG. 1. Each of the string select transistors GSL in FIG. 3 and FIG. 23is able to store binary data. Before data writing, data stored in allthe memory storage cells (memory transistors MC0, MC1, MCi-2, MCi-1) ofthe memory block are beforehand erased collectively (see erase biasvoltages applied in FIG. 5).

In initialization step S400, the memory block number (counter) BN isinitialized to zero. The memory block number (counter) BN is incremented(S430) each time the programming step S410 is performed upon the groundselect transistors GST of the current memory block BN, until all memoryblocks (S420, YES branch) have been processed. In programming step S410,the ground select transistors (GST) in the current block BN areprogrammed.

FIG. 19 is a circuit diagram of the NAND cell unit of FIG. 3,illustrating voltages applied for “one pulse” or “ISPP” programmingwithout PGM inhibit of ground select transistors GST during step S410 ofFIG. 18. The ground select transistors GST in each block may be “onepulse” or “ISPP” programmed (“0” write) without PGM inhibit by applyingthe bias voltages as illustrated in FIG. 19.

During a “one-pulse” GST programming during step S410 of FIG. 18, aground voltage (0V) is applied to all the control gate lines (e.g., wordlines WL0-WLi-1), and to the control gate/line (GSL) of the stringselect transistor (SST), and the ground voltage (0V) is applied to thesource line CSL. The program voltage Vpgm is applied to the groundselect line GSL and to the control gates of all ground selecttransistors GST in the memory block. Thus all ground select transistorsGST in the current memory block may be programmed to have a desiredthreshold voltage Vth, e.g., with “0” data stored therein.

FIG. 20 is circuit diagram of a memory block comprising a NAND cell unithaving a programmable string select transistor SST and anon-programmable ground select transistor SST according to an embodimentof the present invention.

Referring to FIG. 1 and FIG. 21, in a memory cell array 110, NAND cellunits 111′ are arranged in row and column directions in a matrix form,and connected to control gate lines (e.g., word lines WL₀-WL_(i-1)), bitlines (BL0, BL1, BL2 . . . BL_(j-1)), string and ground selection lines(SSL, GSL), and source lines (CSL). Selected ones of the control gatelines (WL₀-WL_(i-1)) and selection gate lines (SSL, GSL), in the memorycell array 110 are selected during erase, programming, verification, andread operations.

The memory storage cells (MC0, MC1, MCi-2, MCi-1) may be memorytransistors of the floating gate type, and in that case the stringselection transistors SST may also be memory transistors of the floatinggate type and so there is no butting contact between the control gateand the floating gate in the selection transistors SST. However, in thissecond embodiment of the invention, and the ground selection transistorsGST are not memory transistors and are not programmable. Thus, as shownin FIG. 21 there may be provided a butting contact GSL-via between thecontrol gate and the dummy floating gate of each ground selectiontransistor GST.

FIG. 21 is a side cross-sectional view of a NAND cell unit in anintegrated circuit according to the present embodiment of the presentinvention, along section line 114-115 in FIG. 20. The NAND cell unit111′ of FIG. 20 is formed on a semiconductor substrate 100-1. Thechannel of the NAND cell unit 111′ is formed in the semiconductorsubstrate 100-1 between the selection transistors SST and GST. Thechannel of the NAND cell unit 111′ may be isolated from channels ofother adjacent NAND cell units by shallow trench isolation (STI) (notshown), that prevents electrical current leakage between adjacentsemiconductor device components. In this exemplary embodiment, only thestring selection transistor SST and not the ground select transistor GSTare memory transistors. Thus, only the string selection transistor SSThas both a control gate (SSL) and a floating gate (SST-FG). And, theground selection transistor GST has a control gate (GSL) connected to adummy floating gate (GST-FG) by a butting contact GSL-via, and the dummyfloating gate functions as the control gate of the ground selectiontransistor GST.

The memory storage cells MC (MC0, MC1, MCi-2, MCi-1) may be memorytransistors of the floating gate type, and in that case the stringselection transistors SST may be memory transistors of the floating gatetype and there is no butting contact between the control gates (SSL) andthe floating gates (SST-FG) of each string selection transistors SST.

In accordance with an exemplary embodiment of the invention, the stringselection transistors SST are programmable memory transistors, and thegate lengths of the control gates of string selection transistors SSTmay be the same as the gate length of the control gates of the memorystorage cells MC (MC0, MC1, MCi-2, MCi-1).

FIG. 22 is circuit diagram of a memory block comprising a NAND cell unit111″ having a programmable ground select transistor GST according toanother embodiment of the present invention. Referring to FIG. 1 andFIG. 22, in a memory cell array 110, NAND cell units 111″ are arrangedin row and column directions in a matrix form, and connected to controlgate lines (e.g., word lines WL₀-WL_(i-1)), bit lines (BL0, BL1, BL2 . .. BL_(j-1)), string and ground selection lines (SSL, GSL), and sourcelines (CSL). Selected ones of the control gate lines (WL₀-WL_(i-1)) andselection gate lines (SSL, GSL), in the memory cell array 110 areselected during erase, programming, verification, and read operations.

The memory storage cells (MC0, MC1, MCi-2, MCi-1) may be memorytransistors of the floating gate type, and in that case the groundselection transistors GST may also be memory transistors of the floatinggate type and so there is no butting contact between the control gateand the floating gate in the ground selection transistors GST. However,in this exemplary embodiment of the invention, the string selectiontransistors SST are not memory transistors and are not programmable.Thus, as shown in FIG. 23 there may be provided a butting contactSSL-via between the control gate and the dummy floating gate of eachstring selection transistor SST.

FIG. 23 is a side cross-sectional view of a NAND cell unit 111″ in anintegrated circuit according to the another embodiment of the presentinvention, along section line 116-117 in FIG. 22. The NAND cell unit111″ of FIG. 22 is formed on a semiconductor substrate. 100-1. Thechannel of the NAND cell unit 111″ is formed in the semiconductorsubstrate 100-1 between the selection transistors SST and GST. Thechannel of the NAND cell unit 111″ may be isolated from channels ofother adjacent NAND cell units by shallow trench isolation (STI) (notshown), that prevents electrical current leakage between adjacentsemiconductor device components. In this exemplary embodiment, only theground selection transistor GST and not the string select transistor SSTare memory transistors. Thus, only the ground selection transistor GSThas both a control gate (GSL) and a floating gate (GST-FG). And, thestring selection transistor SST has a control gate (SSL) connected to adummy floating gate (SST-FG) by a butting contact SSL-via, and the dummyfloating gate functions as the control gate of the string selectiontransistor SST.

The memory storage cells MC (MC0, MC1, MCi-2, MCi-1) may be memorytransistors of the floating gate type, and in that case the groundselection transistors GST may be memory transistors of the floating gatetype and there is no butting contact between the control gates (GSL) andthe floating gates (GST-FG) of each ground selection transistors GST.

In accordance with an exemplary embodiment of the invention, the groundselection transistors GST are programmable memory transistors, and thegate lengths of the control gates of ground selection transistors GSTmay be the same as the gate length of the control gates of the memorystorage cells MC (MC0, MC1, MCi-2, MCi-1).

FIG. 24 is a block diagram of a computer system including a computer 20hosting a removable memory card 10 including a flash memory deviceaccording to an embodiment of the present invention. The memory card 10further includes a flash memory controller (not shown) which controlsdata flow and commands between a memory interface I/F 25 in the hostcomputer 20 and the flash memory transistors (not shown) in the memorycard 10. Examples of the computer 20 include personal computers, fileservers, peripheral devices, wireless devices, digital cameras, personaldigital assistants (PDA's), MP3 audio players, MPEG video players, andaudio recorders. The removable memory card will typically have a housingthat has a predetermined form factor and interface, such as SD (SecureDigital), MS (memory stick), CF (compact flash), SMC (smart media), MMC(multi media), or XD (XD-Picture Card), PCMCIA, CardBus, IDE, EIDE,SATA, SCSI, universal serial bus e.g., a USB flash drive) etc.

It will be appreciated by those skilled in the art that additionalcircuitry and control signals can be provided, and that the computersystem of FIG. 1 has been simplified.

FIG. 24 is a block diagram of a computer system 2000 including a flashmemory system including a flash memory device 2500 according to anembodiment of the present invention. The flash memory device 2500 iscoupled to a memory controller 2400 for accessing the flash memorytransistor array in the flash memory device 2500. The flash memorydevice 2500 coupled to the memory controller 2400 forms part of thecomputer system 2000. Some examples of the computer system 2000 includepersonal computers, peripheral devices, wireless devices, digitalcameras, personal digital assistants (PDA's), MP3 audio players, MPEGvideo players, digital audio recorders, and digital video recorders. Thememory system can be a memory card-based hard-drive, a Solid State DiskSSD, a hybrid (SSD/magnetic) disk, a Camera Image Processor (CIS) or amemory core integrated with the CPU 2100.

The memory device 2500 of the memory system of FIG. 24 receives controlsignals across control lines from the system bus 2001 via the memorycontroller 2400 to control access to the memory transistor array in thememory device 2500. Access to the memory transistor array in the memorydevice 2500 is directed to one or more target memory transistors byintegrated transistors in peripheral circuitry and via word lines andbit lines in the memory device 2500. Once the memory transistor array isaccessed in response to the control signals and the address signals,data is written to or read from the memory transistors by the integratedtransistors in the peripheral circuitry in the memory device 2500.

The memory device 2500 in the computer system 2000 of FIG. 6, and thememory device 100 in the memory card of FIG. 1 can be mounted in variouspackage types, including Ball Grid Arrays (BGAs), Chip Scale Packages(CSPs), Plastic Leaded Chip Carrier (PLCC), Plastic Dual In-Line Package(PDIP), Multi Chip Package (MCP), Wafer-level Fabricated Package (WFP),Wafer-Level Processed Stack Package (WSP).

As described above, in memory devices in accordance with exemplaryembodiments of the invention, memory transistors and selectiontransistors may be integrated and formed using the same process steps,thus increasing manufacturing efficiency.

Having thus described exemplary embodiments of the present invention, itis to be understood that the invention defined by the appended claims isnot to be limited by particular details set forth in the abovedescription as many apparent variations thereof are possible withoutdeparting from the spirit or scope thereof as hereinafter claimed.

What is claimed is:
 1. A method of programming a flash memory devicehaving a plurality of NAND cell units in each of a plurality of memoryblocks, a plurality of memory cell transistors in each NAND cell unitcontrolled by respective wordlines, a first selection line connected toa first selection transistor in each of the NAND cell units in a memoryblock, each first selection transistor being a memory transistorconnected in series to the plurality of memory cell transistors in eachNAND cell unit, the method comprising: simultaneously erasing all of thememory cell transistors in the first memory block among the plurality ofmemory blocks; programming all the memory cell transistors connected toa first wordline in the first memory block; and programming andprogram-inhibiting all first selection transistors in all NAND cellunits of the first memory block.
 2. The method of claim 1, furthercomprising verifying the threshold voltage of each first selectiontransistor to have a predetermined threshold voltage.
 3. The method ofclaim 1, wherein the program-inhibiting of the first selectiontransistors is performed by bitline biasing.
 4. The method of claim 3,wherein the step of bitline biasing comprises applying to a bitline avoltage higher than zero.
 5. The method of claim 1, wherein the firstselection transistor is a string selection transistor SST, and the firstselection line is a string selection line SSL.
 6. The method of claim 1,wherein the first selection transistor is a ground selection transistorGST, and the first selection line is a ground selection line GSL.
 7. Themethod of claim 1, wherein the memory cell transistors of the flashmemory device are memory transistors of the charge trap type.
 8. Themethod of claim 1, wherein the memory cell transistors of the flashmemory device are memory transistors of the floating gate type andwherein the first selection transistors are memory transistors of thefloating gate type.